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Zero-G Devices
Parameter | Test Condition | Min | Max | Unit |
|---|---|---|---|---|
Supply voltage (VCC) | 2 | 6 | V | |
Input voltage (VI) | 0 | VCC | V | |
Output voltage (VO) | 0 | VCC | V | |
Operating temperature in air (TA) | -40 | 125 | °C | |
Input clamp current (IIK) | VI < 0 or VI > VCC | ±20 | mA | |
Output clamp current (IOK) | VO < 0 or VO > VCC | ±20 | mA | |
Continuous output current (IOK) | VO = 0 to VCC | ±25 | mA | |
Continuous current through VCC or GND (IOK) | ±50 | mA | ||
Input leakage current (IL) | Vcc = 6 V | ±100 | nA | |
Supply current (ICC) | Vcc = 6 V | 2 | μA | |
Input capacitance (Ci) | Vcc = 2 V to 6 V | 10 | pF | |
Propagation delay (Tpd) | Vcc = 6 V | 32 | ns |
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ZG54HC132
NAND gate, automotive-grade, SEL immune to LET of 37 MeV-cm2/mg.
The ZG54HC132 is a Schmitt-Trigger NAND gate with 4 channels and 2 inputs. The part features typical current consumption of < 2 uA, and propagation delay of ~ 15 ns at 6 V. The part is qualified to AEC-Q100 standards. View the reliability testing flow here. We have performed radiation qualification for SEL immunity up to LET of 37 MeV-cm2/mg. The part is available in a SOIC-14 package.
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