Zero-G Devices
Solutions for Space
Radiation Tolerant and High Reliability
Cutting Edge Performance
Part Number
Category
Polarity
Temperature
TID
SEL
VCE (V)
IC (A)
VCEsat (V)
PD (W)
hFE1
hFE1 IC (A)
fT (MHz)
Package
RBN40M1A-L (2N2222) | General Purpose | NPN | -55 to 150 | 50 krad | Immune | 40 | 0.6 | 0.3 | 0.225 | 35 | 0.0001 | 300 | SOT23 |
RBP40M1A-L | Medium Power Transistor | PNP | -55 to 150 | 50 krad | Immune | 40 | 1 | 0.2 | 0.5 | 300 | 0.1 | 150 | SOT23 |
RBN40M2A-L (Dual 2N2222) | Small Signal Transistor | NPN + NPN | -55 to 150 | 50 Krad | Immune | 40 | 0.6 | 0.3 | 0.15 | 100 | 0.15 | 300 | SOT563 |
RBD40M1A-L | Medium Power Transistor | NPN + PNP | -55 to 150 | 50 Krad | Immune | 40 | 2 | 0.3 | 1.7 | 300 | 0.5 | 150 | DFN-8 |
RBN45M2A-L | General Purpose | NPN | -55 to 150 | 50 krad | Immune | 45 | 0.8 | 0.3 | 0.3 | 50 | 0.0001 | 100 | SOT-23 |
RBP50L1A-L | General Purpose | PNP | -55 to 150 | 50 krad | Immune | 50 | 0.1 | 0.5 | 0.265 | 120 | 0.001 | SOT-723 | |
RBN50L1A-L | General Purpose | NPN | -55 to 150 | 50 krad | Immune | 50 | 0.1 | 0.4 | 0.26 | 120 | 0.001 | 180 | SOT-723 |
RBN50M1A-L | General Purpose | NPN | -55 to 150 | 50 krad | Immune | 50 | 0.5 | 0.6 | 0.2 | 120 | 0.15 | SC-59-3 | |
RBN60M3A-L | Medium Power Transistor | NPN + NPN | -55 to 150 | 50 Krad | Immune | 50 | 1 | 0.035 | 1.1 | 300 | 0.1 | 215 | SOT26 |
RBP60M1A-L (2N2907) | General Purpose | PNP | -55 to 150 | 50 krad | Immune | 60 | 0.6 | 0.4 | 0.225 | 75 | 0.0001 | SOT23 | |
RBN60M2A-L | Medium Power Transistor | NPN | -55 to 150 | 50 krad | Immune | 60 | 1 | 0.15 | 0.5 | 100 | 0.5 | 150 | SOT23 |
RBN60M1A-L | General Purpose | NPN | -55 to 150 | 50 krad | Immune | 60 | 0.5 | 0.25 | 0.225 | 100 | 0.01 | 100 | SOT23 |
RBP60M2A-L | Low Saturation Transistor | PNP | -55 to 150 | 50 krad | Immune | 60 | 1 | 0.175 | 0.725 | 150 | 0.5 | 150 | SOT23 |
RBP60M3A-L | Darlington Transistor | PNP | -65 to 150 | 50 Krad | Immune | 60 | 0.5 | 1 | 0.35 | 10000 | 0.1 | 200 | SOT23 |
RBP60M4A-L (Dual 2N2907) | Small Signal Transistor | PNP + PNP | -55 to 150 | 50 Krad | Immune | 60 | 0.6 | 0.4 | 0.2 | 100 | 0.15 | 200 | SOT363 |
RBP60M5A-L | Low Saturation Transistor | PNP + PNP | -55 to 150 | 50 Krad | Immune | 60 | 2 | 0.12 | 2.47 | 170 | 0.1 | DFN-6 | |
RBN80M1A-L | Small Signal Transistor | NPN | -55 to 150 | 50 krad | Immune | 80 | 0.5 | 0.25 | 0.2 | 100 | 0.01 | 100 | SOT323 |
(Click on any row to see more details)
Our radiation tolerant product library consists of COTS and automotive-grade parts up-screened to a baseline total-ionizing dose (TID) of 50 krad. Our products are ideal for performance-driven missions in LEO and MEO, including SmallSat and CubeSat programs, and some GEO missions as well.
A comprehensive radiation test report for each part type is provided with each order. TID screening is performed per MIL-STD-750 or MIL-STD-883 TM1019 using a certified Co-60 gamma ray source. Our rigorous test program includes RLAT for each wafer lot on a large sample size to determine lot variance with accuracy.
We also offer additional screening per customer requirements, including low dose rate irradiation, single-event effect (SEE) testing, neutron displacement damage testing, etc.
Use the inquiry form to request a quote. You can also request a datasheet, which includes a summary of the radiation characteristics, or ask us any other question.
Radiation Tolerant Bipolar Junction Transistors
Features:
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RLAT on each wafer lot per MIL-STD-750 or MIL-STD-883 TM1019, 50 krad minimum TID tolerance
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Automotive-grade reliability. Review AEC-Q100 reliability qualification test flows
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Hi-Rel temperature range: -55 to +150
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Small size, light weight, and cost-efficient (a fraction of the form factor and cost of MIL-PRF-19500 qualified devices)
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Our products are in stock and ready to ship. No lead time expected on most orders
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Small MOQ ensures flexibility
Forging Future Frontiers: Engineered Solutions for the New Space Era.