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Zero-G Devices
Parameter | Condition | Min | Max | Unit |
|---|---|---|---|---|
Package | SOIC-14 | |||
DC Supply Voltage Range (VDD) | 0 | 15 | V | |
Input Current (Iin) | VDD, Vdc = 15 | ±1 | µAdc | |
Quiescent Current (IDD) | VDD, Vdc = 15 | 30 | µAdc | |
Propagation Delay Time (tPLH, tPHL) | VDD, Vdc = 15 | 100 | ns | |
Power Dissipation (PD) | Temperature derating: -7.0 mW/°C from 65 to 125 °C | 500 | mW | |
Ambient Temperature Range (TA) | -55 | +125 | °C | |
Input capacitance (Cin) | Vin = 0 V, TA = 25°C | 7.5 | pF |
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ZG54CD00
NAND Gate, SEL immune to LET of 58 MeV-cm2/mg.
The ZG54CD00 is a dual channel, 4-input NAND gate. The part features low quiescent current of 1 uA and propagation delay of 50ns at 15V. We have performed radiation qualification for SEL immunity up to LET of 58 MeV-cm2/mg. The part is available in a SOIC-14 package.
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