RBN400M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	400		V
Collector-Emitter Breakdown Voltage	BVCEO	400		V
Emitter-Base Breakdown Voltage	BVEBO	7		V
Collector Cutoff Current	ICBO		100	nA
Emitter Cutoff Current	IEBO		100	nA
DC current transfer Static Ratio (Note 1)	hFE (IC = 1mA, VCE = 10V)	100		-
	hFE (IC = 50mA, VCE = 10V)	100	300	-
	hFE (IC = 100mA, VCE = 10V)	15		-
Collector-Emitter Saturation Voltage (Note 1)	VCE(sat)		0.2	V
Base-Emitter Turn-on Voltage (Note 1)	VBE(sat)		0.9	V
Transitional Frequency	fT	50		MHz

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation	PD	0.5	W
Thermal Resistance, Junction to Ambient Air	RθJA	250	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	°C

Radiation Performance - 50 Krad(Si)

Description	Typical	95% CI limit	Test Condition
hFE1	50.625	45.45340208	IC = 1mA, VCE = 10V
hFE2	81.625	79.00747732	IC = 10mA, VCE = 10V
hFE3	33	33	IC = 50mA, VCE = 10V
Vcesat	0.1875	0.19676013	IC = 50 mA, IB = 6 mA
Vbesat	0.7848875	0.788310981	IC = 50 mA, IB = 6 mA
Iceo	5.01E-06	5.46E-06	Vceo=2.000000E+2
Icbo	5.53E-07	5.92E-07	Vcbo=2.000000E+2
Iebo	4.99E-09	5.17E-09	Vebo=7.000000E+0

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBN400M1A-L is a high voltage NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	400 V
Saturation voltage (VCEsat):	200 mV
Continuous current (IC)	225 mA
Reliability Grade:	Qualified to AEC-Q101 Standards
Total-Ionizing Dose:	Tested to 50 krad(Si)
Package:	SOT-23 molded plastic

Zero-G Devices

RBN400M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBN400M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Ready to order? Have more questions? Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com