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Zero-G Devices
RBP60M1A-L
Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)
RBP60M1A is a general purpose PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad. The part is an alternative to the 2N2907 with analogous electrical performance specifications.
Breakdown voltage (BVCEO) | -60 V |
Saturation voltage (VCEsat) | -0.4 V |
Continuous current (IC) | -0.6 A |
Reliability Grade: | Qualified to AEC-Q101 Standards |
Total-Ionizing Dose: | 50 krad(Si) |
Package: | SOT-23 molded plastic |
Notice: This part is rated Pb-free and ROHS compliant.
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