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Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

RBP60M1A is a general purpose PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad. The part is an alternative to the 2N2907 with analogous electrical performance specifications. 

Breakdown voltage (BVCEO)
-60 V
Saturation voltage (VCEsat)
-0.4 V
Continuous current (IC)
-0.6 A
Reliability Grade:
Qualified to AEC-Q101 Standards
Total-Ionizing Dose:
50 krad(Si)
SOT-23 molded plastic

Notice: This part is rated Pb-free and ROHS compliant.

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