RBN80M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	80		V
Collector-Emitter Breakdown Voltage	BVCEO	80		V
Emitter-Base Breakdown Voltage	BVEBO	4		V
Collector-Base Cutoff Current	ICBO		100	nA
Collector-Emitter Cutoff Current	ICES		100	nA
DC current transfer Static Ratio (Note 1)	hFE1 (IC = 10 mA, VCE = 1 V)	100		-
	hFE2 (IC = 100 mA, VCE = 1 V)	100		-
Collector-Emitter Saturation Voltage	VCE(sat)		0.25	V
Base-Emitter Saturation Voltage	VBE(sat)		1.2	V
Current gain-bandwidth product	fT	100		MHz

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation	PD	0.2	W
Thermal Resistance, Junction to Ambient Air	RθJA	625	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	°C

Radiation Performance - 50 Krad(Si)

Symbol	Typical	95% CI limit	Test Condition
hFE1	50.88	47.33	IC = 1 mA, VCE = 1 V
hFE2	91.27	89.18	IC = 10 mA, VCE = 1 V
hFE3	92.54	91.4	IC = 100 mA, VCE = 1 V
hFE4	32.47	31.88	IC = 500 mA, VCE = 1 V
Vcesat	0.2	0.22	IC = 100 mA, IB = 10 mA
Vbesat	0.9	0.91	IC = 100 mA, IB = 10 mA
Iceo	7.62E-09	8.08E-09	VCEO = -80 V
Icbo	7.10E-09	7.60E-09	VCBO = -90 V
Iebo	4.81E-09	5.34E-09	VEBO = -5 V

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBN80M1A is a small signal NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	80 V
Saturation voltage (VCEsat):	0.25 V
Continuous current (IC):	0.5 A
Reliability Grade:	Qualified to AEC-Q101 Standards
Total-Ionizing Dose:	50 krad(Si)
Package:	SOT-323 molded plastic
Moisture Sensitivity	Level 1 per J-STD-020

Notice: This part is rated Pb-free and ROHS compliant.

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Zero-G Devices

RBN80M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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About

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBN80M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com