RBN60M2A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	80			V
Collector-Emitter Breakdown Voltage	BVCEO	60			V
Emitter-Base Breakdown Voltage	BVEBO	7	8.1		V
Collector-Base Cutoff Current	ICBO			100	nA
Emitter-Base Cutoff Current	IEBO			100	nA
Collector-Emitter Cutoff Current	ICES			100	nA
DC current transfer Static Ratio (Note 1)	hFE (IC = 1 mA, VCE = 5 V)	100	140		-
	hFE (IC = 500 mA, VCE = 5 V)	100	150	300	-
	hFE (IC = 1 A, VCE = 5 V)	80	120		-
	hFE (IC = 2 A, VCE = 5 V)	30	40		-
Collector-Emitter Saturation Voltage	VCE(sat)			0.15	V
Base-Emitter Turn-on Voltage	VBE(on)			1	V
Base-Emitter Saturation Voltage	VBE(sat)			1.1
Transitional Frequency	fT	150			MHz
Output Capacitance	Cobo			10	pF

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation (Note 1)	PD	0.5	W
Thermal Resistance, Junction to Ambient Air (Note 1)	RθJA	250	°C/W
Thermal Resistance, Junction to Leads (Note 2)	RθJL	197	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	°C

Radiation Performance - 50 Krad(Si)

Symbol	Typical	95% CI limit	Test Condition
hFE1	47.54	37.45	IC = 1 mA, VCE = 5 V
hFE2	73.29	61.49	IC = 10 mA, VCE = 5 V
hFE3	104.34	95.23	IC = 100 mA, VCE = 5 V
hFE4	107.9	99.91	IC = 500 mA, VCE = 5 V
hFE5	92.74	88.88	IC = 1 A, VCE = 5 V
Vcesat	0.12	0.23	IC = 500 mA, IB = 50 mA
Vbesat	1.38	1.45	IC = 500 mA, IB = 50 mA
Iceo	7.90E-09	8.20E-09	VCEO = -60 V
Icbo	1.02E-08	1.15E-08	VCBO = -80 V
Iebo	1.33E-08	1.74E-08	VEBO = -7 V

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBN60M2A is a medium power NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO)	60 V
Saturation voltage (VCEsat)	0.15 V
Continuous current (IC)	1 A
Reliability Grade:	Qualified to AEC-Q101 Standards
Total-Ionizing Dose:	50 krad(Si)
Package:	SOT-23 molded plastic
Moisture Sensitivity	Level 1 per J-STD-020

Notice: This part is rated Pb-free and ROHS compliant.

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Zero-G Devices

RBN60M2A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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About

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBN60M2A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com