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RBN45M2A-L

Radiation upscreened, high reliability, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

RBN45M2A is a general purpose NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):
45 V
Saturation voltage (VCEsat):
0.7 V
Continuous current (IC)
0.8 A
Reliability Grade:
Qualified to AEC-Q101 Standards
Total-Ionizing Dose:
Tested to 50 krad(Si)
Package:
SOT-23 molded plastic

Notice: This part is rated Pb-free and ROHS compliant.

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