top of page

RBN40M1A-L

Radiation upscreened, high reliability, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

RBN40M1A is a general purpose NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad. The part is an alternative to the 2N2222 with analogous electrical performance specifications. 

Breakdown voltage (BVCEO):
40 V
Saturation voltage (VCEsat):
0.4 V
Continuous current (IC)
0.6 A
Reliability Grade:
Qualified to AEC-Q101 Standards
Total-Ionizing Dose:
Tested to 50 krad(Si)
Package:
SOT-23 molded plastic

Notice: This part is rated Pb-free and ROHS compliant.

Ready to order? Have more questions?

Request a datasheet, or ask us any question.

bottom of page