RBP60M5A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	-60			V
Collector-Emitter Breakdown Voltage	BVCEO	-60			V
Emitter-Base Breakdown Voltage	BVEBO	-7			V
Collector Cutoff Current	ICBO			-100	nA
Emitter Cutoff Current	IEBO			-100	nA
DC current transfer Static Ratio (Note 1)	hFE (IC = -100 mA, VCE = -2 V )	200	420		-
	hFE (IC = -500 mA, VCE = -2 V )	300	450		-
	hFE (IC = -1 A, VCE = -2 V )	200	350		-
	hFE (IC = -2 A, VCE = -2 V )	75	130		-
Collector-Emitter Saturation Voltage (Note 1)	VCE(sat)			-120	mV
Base-Emitter Turn-on Voltage (Note 1)	VBE(sat)			-1	V

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation	PD	400	mW
Thermal Resistance, Junction to Ambient Air	RθJA	308	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	°C

Radiation Performance - 50 Krad(Si)

Description	Typical	95% CI limit	Test Condition
hFE1	338	332	IC = -100 mA, VCE = -2 V
hFE2	279	275	IC = -500 mA, VCE = -2 V
hFE3	148	176	IC = -1 A, VCE = -2 V
Vcesat	-0.62	-0.59	IC = -500 mA, IB = -50 mA
Vbesat	-1.06	-1.04	IC = -500 mA, IB = -50 mA
Iceo	-6.36E-08	-5.83E-08	Vceo=-6.000000E+1
Icbo	-1.04E-09	-9.17E-10	Vcbo=-6.000000E+1
Iebo	-5.33E-10	-4.99E-10	Vebo=-7.000000E+0

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBP60M5A-L is a low saturation voltage, dual PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	-60 V
Saturation voltage (VCEsat):	-120 mV
Continuous current (IC)	-2 A
Reliability Grade:	Qualified to AEC-Q101 Standards for High Reliability
Total-Ionizing Dose:	Tested to 50 krad(Si)
Package:	DFN-6

Zero-G Devices

RBP60M5A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBP60M5A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Ready to order? Have more questions? Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com