RBP60M3A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	-80		V
Collector-Emitter Breakdown Voltage	BVCEO	-60		V
Emitter-Base Breakdown Voltage	BVEBO	-10		V
Collector Cutoff Current	ICBO		-100	nA
Emitter Cutoff Current	IEBO		-100	nA
DC current transfer Static Ratio (Note 1)	hFE (IC = -1 mA, VCE = -5 V )	2000		-
	hFE (IC = -10 mA, VCE = -5V )	4000		-
	hFE (IC = -100 mA, VCE = -5V )	10000		-
Collector-Emitter Saturation Voltage (Note 1)	VCE(sat)		-1	V
Base-Emitter Turn-on Voltage (Note 1)	VBE(sat)		-1.5	V

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation	PD	0.25	W
Thermal Resistance, Junction to Ambient Air	RθJA	227	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-65 to +150	°C

Radiation Performance - 50 Krad(Si)

Description	Typical	95% CI limit	Test Condition
hFE1	4098.40	3776.02	IC = -1 mA, VCE = -5 V
hFE2	11550.49	10805.51	IC = -10 mA, VCE = -5 V
hFE3	22456.88	23452.81	IC = -100 mA, VCE = -5 V
Vcesat	-0.91	-1.96	IC = -100 mA, IB = -0.1 mA
Vbesat	-0.91	-0.89	IC = -100 mA, IB = -0.1 mA
Iceo	-7.60E-09	-7.03E-09	Vceo=-6.000000E+1
Icbo	-3.67E-09	-3.49E-09	Vcbo=-8.000000E+1
Iebo	-8.85E-10	-8.16E-10	Vebo=-1.000000E+1

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBP60M3A-L is a Darlington PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	-60 V
Saturation voltage (VCEsat):	-1 V
Continuous current (IC)	-0.5 A
Reliability Grade:	Qualified to AEC-Q101 Standards for High Reliability
Total-Ionizing Dose:	Tested to 50 krad(Si)
Package:	SOT23

Zero-G Devices

RBP60M3A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBP60M3A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Ready to order? Have more questions? Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com