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Zero-G Devices
RBP40M1A-L
Radiation upscreened, high reliability, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)
RBP40M1A is a general purpose PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.
Breakdown voltage (BVCEO): | -40 V |
Saturation voltage (VCEsat): | -0.5 V |
Continuous current (IC) | -1 A |
Reliability Grade: | Qualified to AEC-Q101 Standards |
Total-Ionizing Dose: | Tested to 50 krad(Si) |
Package: | SOT-23 molded plastic |
Weight: | Approximately 8 mg |
Moisture Sensitivity: | Level 1 per J-STD-020 |
Pb-free: | Pb-Free & Fully RoHS compliant |
Notice: This part is rated Pb-free and ROHS compliant.
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