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RBP400M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

RBP400M1A-L is a high voltage PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):
-400 V
Saturation voltage (VCEsat):
-0.2 V
Continuous current (IC)
-150 mA
Reliability Grade:
Qualified to AEC-Q101 Standards
Total-Ionizing Dose:
Tested to 50 krad(Si)
Package:
SOT-23 molded plastic
RBP400M1A-L_hFE_rad.png

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