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RBP150M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

RBP150L1A is a high voltage, general purpose PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):
-150 V
Saturation voltage (VCEsat):
-200 mV
Continuous current (IC)
-0.6 A
Reliability Grade:
Qualified to AEC-Q101 Standards for High Reliability
Total-Ionizing Dose:
Tested to 50 krad(Si)
Package:
SOT23

Notice: This part is rated Pb-free and ROHS compliant.

RBP150M1A-L_hFE_rad.png
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