RBP150M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	-160		V
Collector-Emitter Breakdown Voltage	BVCEO	-150		V
Emitter-Base Breakdown Voltage	BVEBO	-5		V
Collector Cutoff Current	ICBO		-50	nA
Emitter Cutoff Current	IEBO		-50	nA
DC current transfer Static Ratio (Note 1)	hFE (IC = -1 mA, VCE = -5 V )	50		-
	hFE (IC = -10 mA, VCE = -5V )	60	240	-
	hFE (IC = -50 mA, VCE = -5V )	50		-
Collector-Emitter Saturation Voltage (Note 1)	VCE(sat)		-0.2	V
Base-Emitter Turn-on Voltage (Note 1)	VBE(sat)		-1	V

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation	PD	0.31	W
Thermal Resistance, Junction to Ambient Air	RθJA	403	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	°C

Radiation Performance - 50 Krad(Si)

Description	Typical	95% CI limit	Test Condition
hFE1	52	50	IC = -1 mA, VCE = -5 V
hFE2	64	53	IC = -10 mA, VCE = -5 V
hFE3	80	79	IC = -50 mA, VCE = -5 V
Vcesat	-0.11	-0.11	IC = -10 mA, IB = -1 mA
Vbesat	-7.31E-01	-7.30E-01	IC = -10 mA, IB = -1 mA
Iceo	-3.48E-08	-2.94E-08	Vceo=-1.500000E+2
Icbo	-2.03E-08	-1.73E-08	Vcbo=-1.600000E+2
Iebo	-5.40E-09	-5.18E-09	Vebo=-5.000000E+0

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBP150L1A is a high voltage, general purpose PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	-150 V
Saturation voltage (VCEsat):	-200 mV
Continuous current (IC)	-0.6 A
Reliability Grade:	Qualified to AEC-Q101 Standards for High Reliability
Total-Ionizing Dose:	Tested to 50 krad(Si)
Package:	SOT23

Notice: This part is rated Pb-free and ROHS compliant.

Zero-G Devices

RBP150M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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About

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBP150M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com