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Zero-G Devices
RBP100H1A-L
Radiation Tolerant & HiRel, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)
RBP100H1A-L is a low saturation, PNP bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.
Breakdown voltage (BVCEO): | -100 V |
Saturation voltage (VCEsat): | 70 mV |
Continuous current (IC) | -3 A |
Reliability Grade: | Qualified to AEC-Q101 Standards |
Total-Ionizing Dose: | Tested to 50 krad(Si) |
Package: | Power DI5060 |
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