RBN80M2A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	BVCEO	80			V
Collector-Base Breakdown Voltage	BVCBO	100			V
Emitter-Base Breakdown Voltage	BVEBO	5			V
Collector-Base Cutoff Current	ICBO			100	nA
Emitter-Base Cutoff current	IEBO			10	μA
DC current transfer Static Ratio (Note 1)	hFE1 (IC = 5 mA, VCE = 2.0 V)	25			-
	hFE2 (IC = 150 mA, VCE = 2.0 V)	63		160	-
	hFE3 (IC = 500 mA, VCE = 2.0 V)	25			-
Collector-Emitter Saturation Voltage (Note 1)	VCE(sat)			0.5	V
Base-Emitter Saturation Voltage (Note 1)	VBE(sat)			1	V
Transitional Frequency	fT		130		MHz

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Power Dissipation	PD	1.5	W
Thermal Resistance, Junction to Ambient Air	RθJA	83.3	°C/W
Junction and Storage Temperature Range	TJ, TSTG	-65 to +150	°C
Maximum temperature for Soldering, 10 seconds in solder bath	TL	260	°C

Radiation Performance - 50 Krad(Si)

Description	Typical	95% CI limit	Test Condition
hFE1	84.00	65.47	IC = 0.1 mA, VCE = 2.0 V
hFE2	90.54	81.21	IC = 5 mA, VCE = 2.0 V
hFE3	80.85	79.09	IC = 150 mA, VCE = 2.0 V
hFE4	39.82	39.52	IC = 500 mA, VCE = 2.0 V
Vcesat	0.44	0.55	IC = 500 mA, IB = 50 mA
Vbesat	1.42	1.48	IC = 500 mA, IB = 50 mA
Iceo	3.00E-08	4.65E-08	VCEO = 80 V
Icbo	6.57E-09	6.91E-09	VCBO = 100 V
Iebo	4.66E-09	5.27E-09	VEBO = 5 V

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBN80M2A is a medium power NPN bipolar junction transistor (BJT) designed for amplifier applications. The device features automotive-grade reliability, and has been up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	80 V
Saturation voltage (VCEsat):	0.5 V
Continuous current (IC):	1 A
Reliability Grade:	Qualified to AEC-Q101 Standards
Total-Ionizing Dose:	50 krad(Si)
Package:	SOT-223 molded plastic

Notice: This part is rated Pb-free and ROHS compliant.

Zero-G Devices

RBN80M2A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBN80M2A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Ready to order? Have more questions? Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com