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RBN80M2A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

RBN80M2A is a medium power NPN bipolar junction transistor (BJT) designed for amplifier applications. The device features automotive-grade reliability, and has been up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):
80 V
Saturation voltage (VCEsat):
0.5 V
Continuous current (IC):
1 A
Reliability Grade:
Qualified to AEC-Q101 Standards
Total-Ionizing Dose:
50 krad(Si)
Package:
SOT-223 molded plastic

Notice: This part is rated Pb-free and ROHS compliant.

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