RBN60M3A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	50			V
Collector-Emitter Breakdown Voltage	BVCEO	50			V
Emitter-Base Breakdown Voltage	BVEBO	7			V
Collector Cutoff Current	ICBO			10	nA
Emitter Cutoff Current	IEBO			10	nA
DC current transfer Static Ratio (Note 1)	hFE (IC = 10 mA, VCE = 2 V )	200	420		-
	hFE (IC = 100 mA, VCE = 2 V )	300	450		-
	hFE (IC = 500 mA, VCE = 2 V )	200	350		-
	hFE (IC = 1 A, VCE = 2 V )	75	130		-
	hFE (IC = 1.5 A, VCE = 2 V )	20	60		-
Collector-Emitter Saturation Voltage (Note 1)	VCE(sat)		24	35	mV
Base-Emitter Turn-on Voltage (Note 1)	VBE(sat)		0.94	1.1	V
Transitional Frequency	fT	215			MHz

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation	PD	0.7	W
Thermal Resistance, Junction to Ambient Air (Note 6)	RθJA	179	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	°C

Radiation Performance - 50 Krad(Si)

Description	Typical	95% CI limit	Test Condition
hFE1	505.64	481.21	IC = -100 mA, VCE = -2 V
hFE2	537.14	513.06	IC = -500 mA, VCE = -2 V
hFE3	357.98	418.90	IC = -1 A, VCE = -2 V
hFE4	107.80	110.18	IC = -1 A, VCE = -2 V
Vcesat	1.10	1.26	IC = 100 mA, IB = 50 mA
Vbesat	1.28E+00	1.36E+00	IC = 100 mA, IB = 50 mA
Iceo	1.37E-08	1.47E-08	Vceo=5.000000E+1
Icbo	2.78E-09	2.92E-09	Vcbo=5.000000E+1
Iebo	1.25E-09	1.40E-09	Vebo=-7.000000E+0

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBN60M3A-L is a low saturation, dual NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	50 V
Saturation voltage (VCEsat):	25 mV
Continuous current (IC)	1 A
Reliability Grade:	Qualified to AEC-Q101 Standards for High Reliability
Total-Ionizing Dose:	Tested to 50 krad(Si)
Package:	SOT26

Zero-G Devices

RBN60M3A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

Zero-G Devices

RBN60M3A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Ready to order? Have more questions? Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com