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Zero-G Devices
RBN45M2A-L
Radiation upscreened, high reliability, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)
RBN45M2A is a general purpose NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.
Breakdown voltage (BVCEO): | 45 V |
Saturation voltage (VCEsat): | 0.7 V |
Continuous current (IC) | 0.8 A |
Reliability Grade: | Qualified to AEC-Q101 Standards |
Total-Ionizing Dose: | Tested to 50 krad(Si) |
Package: | SOT-23 molded plastic |
Notice: This part is rated Pb-free and ROHS compliant.
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