RBN300H1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	350	475		V
Collector-Emitter Breakdown Voltage	BVCEO	300	350		V
Emitter-Base Breakdown Voltage	BVEBO	7	8		V
Collector Cutoff Current	ICBO		1	50	nA
Emitter Cutoff Current	IEBO		1	10	nA
DC current transfer Static Ratio (Note 1)	hFE (IC = 10 mA, VCE = 5 V )	100	200		-
	hFE (IC = 500 mA, VCE = 10 V )	100	200	300	-
	hFE (IC = 2 A, VCE = 10V )	15	25		-
	hFE (IC = 3 A, VCE = 10V )		15		-
Collector-Emitter Saturation Voltage (Note 1)	VCE(sat)		59	100	mV
Base-Emitter Turn-on Voltage (Note 1)	VBE(sat)		1.02	1.25	V

1. Measured under pulsed conditions: Pulse width ≤ 300μs. Duty cycle ≤ 2%

Thermal Characteristics

Characteristic	Symbol	Value	Unit
Collector Power Dissipation	PD	3	W
Thermal Resistance, Junction to Ambient Air	RθJA	42	°C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	°C

Radiation Performance - 50 Krad(Si)

Description	Typical	95% CI limit	Test Condition
hFE1	152.47	138.38	IC = 10 mA, VCE = 5 V
hFE2	154.04	140.35	IC = 500 mA, VCE = 10 V
hFE3	92.15	89.84	IC = 1 A, VCE = 10 V
Vcesat	0.55	0.59	IC = 500 mA, IB = 50 mA
Vbesat	0.99	1.02	IC = 500 mA, IB = 50 mA
Iceo	3.45E-08	3.81E-08	Vceo=2.000000E+2
Icbo	1.31E-08	1.50E-08	Vcbo=2.000000E+2
Iebo	2.93E-09	3.00E-09	Vebo=-7.000000E+0

1. Irradiation performed with Co-60 gamma ray source at high dose rate per MIL-STD-883 TM1019 Condition A with devices under bias during exposure.
2. Values represent the post-irradiation results for a test lot of 5 to 10 samples. Typical represents the mean and 95% CL limit is the upper or lower 95% confidence limit for the test lot.

RBN300H1A-L is a high voltage, medium power NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):	300 V
Saturation voltage (VCEsat):	60 mV
Continuous current (IC)	3.5 A
Reliability Grade:	Qualified to AEC-Q101 Standards
Total-Ionizing Dose:	Tested to 50 krad(Si)
Package:	SOT-223 molded plastic

Zero-G Devices

RBN300H1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Electrical Characteristics

Thermal Characteristics

Radiation Performance - 50 Krad(Si)

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

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San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com

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Zero-G Devices

RBN300H1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

Ready to order? Have more questions? Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

© Zero-G Radiation Assurance

Zero-G Devices is a brand of Zero-G Radiation Assurance, LLC

QUICK LINKS

About

3031 Tisch Way, 110 Plaza West San Jose, CA 95128 Tel: (669) 250-2350 Email: radtolerant@zerogdevices.com

CONTACT

Social:

Contact

Products

Ready to order? Have more questions?
Fill out and submit the form below to request a quote, datasheet, or any other inquiry. Free engineering samples available for evaluation and development.

3031 Tisch Way, 110 Plaza West
San Jose, CA 95128
Tel: (669) 250-2350
Email: radtolerant@zerogdevices.com