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RBN100H1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

RBN100H1A-L is a low saturation, dual NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Breakdown voltage (BVCEO):
100 V
Saturation voltage (VCEsat):
90 mV
Continuous current (IC)
0.5 A
Reliability Grade:
Qualified to AEC-Q101 Standards
Total-Ionizing Dose:
Tested to 50 krad(Si)
Package:
Power DI5060-8
RBN100H1A-L_hFE_rad.png

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