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RBD40M1A-L

Radiation Tolerant & HiRel, plastic encasuplated, NPN Bipolar Junction Transistor (BJT)

RBD40M1A-L is a complementary NPN bipolar junction transistor (BJT) with automotive-grade reliability, and up-screened to a total-ionizing dose (TID) of 50 krad.

Feature
Description NPN
Description PNP
Breakdown voltage (BVCEO):
40 V
-40 V
Saturation voltage (VCEsat):
300 mV
-200 mV
Continuous current (IC)
2 A
-1.5 A
Reliability Grade:
Qualified to AEC-Q101 Standards for High Reliability
Total-Ionizing Dose:
Tested to 50 krad(Si)
Package:
DFN-8
RBD40M1A-L-NPN_hFE_rad.png
RBD40M1A-L-PNP_hFE_rad.png

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